Review of displacement damage effects in silicon devices

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 653-670

  Srour, J R ^a   Marshall, Cheryl J ^b   Marshall, Paul W ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

Annealing; Damage correlation; Defects; Displacement damage; Nonionizing energy loss; Radiation effects; Semiconductors; Silicon; Silicon devices

Indexed keywords

ANNEALING; CALCULATIONS; ELECTRON ENERGY LEVELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; TECHNOLOGICAL FORECASTING;

DISPLACEMENT DAMAGE EFFECTS; NONIONIZING ENERGY LOSS;

RADIATION DAMAGE;

EID: 0038382314     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.813197     Document Type: Article

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