Conduction and low-frequency noise analysis in Al/α-TiOXAl bipolar switching resistance random access memory devices

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 603-605

  Lee, Jung Kyu ^a   Jeong, Hu Young ^b   Cho, In Tak ^a   Lee, Jeong Yong ^b   Choi, Sung Yool ^c   Kwon, Hyuck In ^d   Lee, Jong Ho ^e  

^a Kyungpook National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Chung Ang University   (South Korea)

^e Seoul National University   (South Korea)

Author keywords

Bipolar switching; Low frequency noise (LFN); Random telegraph noise (RTN); Resistance random access memories (RRAMs)

Indexed keywords

AMORPHOUS TIO; LOW-FREQUENCY NOISE; LOW-RESISTANCE STATE; NORMALIZED NOISE; OPERATION MECHANISM; ORDER OF MAGNITUDE; RANDOM TELEGRAPH NOISE; RESISTANCE RANDOM ACCESS MEMORIES (RRAMS); RESISTANCE RANDOM ACCESS MEMORY; TIO; VOLTAGE DEPENDENCE;

NONVOLATILE STORAGE; SWITCHING; TELEGRAPH; THERMAL NOISE;

RANDOM ACCESS STORAGE;

EID: 77953028344     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2046010     Document Type: Article

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