Structural and electrical properties of single crystalline Ga-doped ZnO thin films grown by molecular beam epitaxy

Chinese Physics Letters

Volumn 26, Issue 11, 2009, Pages

  Lu, Zhong Lin ^a,b,c   Zou, Wen Qin ^c   Xu, Ming Xiang ^a   Zhang, Feng Ming ^c   Du, You Wei ^c  

^a SOUTHEAST UNIVERSITY   (China)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY ABSORPTION SPECTROSCOPY; ZINC OXIDE;

A-PLANE SAPPHIRE; DOPED ZNO THIN FILMS; GA DOPING; GA-DOPED ZNO; HIGH QUALITY; MOLECULAR-BEAM EPITAXY; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE FILM; STRUCTURAL AND ELECTRICAL PROPERTIES; THIN-FILMS;

II-VI SEMICONDUCTORS;

EID: 70450286353     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/11/116102     Document Type: Article

References (24)

1. Tabuchi K, Wenas W W, Yamada A, Konagai M and Kakahashi K 1993 Japan. J. Appl. Phys. 32 3764
2. Zhang W Y, Zhong S, Sun L J and Fu Z X 2008 Chin. Phys. Lett. 25 1829
3. Lampe U and Muller J 1989 Sensors Actuators 18 269
4. Zhang H J, Zhang X P and Zhao Y G 2009 Chin. Phys. Lett. 26 077303
5. Minami T 2005 Semicond. Sci. Technol. 20 S35
6. Bhosle V, Tiwari A and Narayan J 2006 Appl. Phys. Lett. 88 032106
7. zgür, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Doan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
8. Yamada T, Miyake A, Kishimoto S, Makino H, Yamamoto N and Yamamoto T 2007 Appl. Phys. Lett. 91 051915
9. Bayraktaroglu B, Leedy K and Bedford R 2008 Appl. Phys. Lett. 93 022104
10. Chang G S, Kurmaev E Z, Boukhvalov D W, Finkelstein L D, Moewes A, Bieber H, Colis S and Dinia A 2009 J. Phys.: Condens. Matter 21 056002
11. Fortunato E, Assuncao V, Goncalves A, Marques A, Aguas H, Pereira L, Ferreira I, Vilarinho P and Martins R 2004 Thin Solid Films 451 443
12. Kim J H, Ahn B D, Lee C H, Jeon K A, Kang H S and Lee S Y 2006 J. Appl. Phys. 100 113515
13. Cheong K Y, Muti N and Ramanan S R 2002 Thin Solid Film 410 142
14. Ye J D, Gu S L, Zhu S M, Liu S M, Zheng Y D, Zhang R, Shi Y, Xu H Q and Ye Y D 2005 J. Crystal Growth 283 279
15. Ko H J, Chen Y F, Hong S K, Wenisch H, Yao T and Look D C 2000 Appl. Phys. Lett. 77 3761
16. Lu Z L, Hsu H S, Tzeng Y H and Huang J C A 2009 Appl. Phys. Lett. 94 152507
17. Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T and Takasu H 2000 Appl. Phys. Lett. 77 1801
18. Martínez-Criado G, Segura A, Sans J A, Homs A, Pellicer-Porres J and Susini J 2006 Appl. Phys. Lett. 89 061906
19. Palmer G B and Poeppelmeier K R 2002 Solid State Sci. 4 317
20. Behan A J, Mokhtari A, Blythe H J, Score D, Xu X H, Neal J R, Fox A M and Gehring G A 2008 Phys. Rev. Lett. 100 047206
21. Mott N F 2001 Adv. Phys. 50 865
22. Li Z Q and Lin J J 2004 J. Appl. Phys. 96 5918
23. Pei Z L, Sun C, Tan M H, Xiao J Q, Guan D H, Huang R F and Wen L S 2001 J. Appl. Phys. 90 3432
24. Ahn B D, Oh S H, Kim H J, Jung M H and Ko Y G 2007 Appl. Phys. Lett. 91 252109