ZnO-based transparent thin-film transistors with MgO gate dielectric grown by in-situ MOCVD

Chinese Physics Letters

Volumn 27, Issue 12, 2010, Pages

  Zhao, Wang ^a   Dong, Xin ^a   Zhao, Long ^a   Shi, Zhi Feng ^a   Wang, Jin ^a   Wang, Hui ^a   Xia, Xiao Chuan ^a   Chang, Yu Chun ^a   Zhang, Bao Lin ^a   Du, Guo Tong ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; II-VI SEMICONDUCTORS; LEAKAGE CURRENTS; MAGNESIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

DEPOSITION TECHNOLOGY; GATE-LEAKAGE CURRENT; GROWTH METHOD; HIGH DIELECTRIC CONSTANTS; HIGH TRANSPARENCY; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; TRANSPARENT THIN FILM TRANSISTOR; VISIBLE LIGHT BANDS; WIDE-BAND-GAP; XRD MEASUREMENTS;

GATE DIELECTRICS;

EID: 78650979641     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/12/128504     Document Type: Article

References (17)

1. Sun X W and Kwok H S 1999 J. Appl. Phys. 86 408
2. Bian J M, Li X M, Gao X D, Yu W D and Chen L D 2004 Appl. Phys. Lett. 84 541
3. Singh A V, Mehra R M, Wakahara A and Yoshida A 2003 J. Appl. Phys. 93 396
4. Bellingeri E, Marré D, Pellegrino L, Pallecchi I, Canu G, Vignolo M, Bernini C and Siri A S 2005 Superlattices and Micro Structures 38 446
5. Fortunato E, Barquinha P, Pimentel A, Gonçalves A, Marques A, Pereira L and Martins R 2005 Thin Solid Films 487 205
6. Shin P K, Aya Y, Ikegami T and Ebihara K 2008 Thin Solid Films 516 3767
7. De Souza M M, Jejurikar S and Adhi K P 2008 Appl. Phys. Lett. 92 093509
8. Remashan K, Jang J H, Hwang D K and Park S J 2007 Appl. Phys. Lett. 91 182101
9. Zhan X A, Zhang J W, Zhang W F, Wang D, Bi Z, Bian X M and Hou X 2008 Thin Solid Films 516 3305
10. Farmakis F V, Speliotis T, Alexandrou K P, Tsamis C, Kompitsas M, Fasaki I, Jedrasik P, Petersson G and Nilsson B 2008 Microelect. Eng. 85 1035
11. Özgür Ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doǧan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
12. Morrison J L, Huso J, Hoeck H, Casey E, Mitchell J, Bergman L and Norton M G 2008 J. Appl. Phys. 104 123519
13. Murphy T E, Chen D and Phillips J D 2004 Appl. Phys. Lett. 85 3208
14. Maikap S, Rahaman S Z and Tien T C 2008 Nanotechnology 19 435202
15. Cullity B D 1978 Elements of X-Ray Diffraction 2nd edn (Reading, MA: Addison-Wesley) p 102
16. Sung M M, Kim C G, Kim J and Kim Y 2002 Chem. Mater. 14 826
17. Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H and Kawai T 2003 J. Appl. Phys. 93 1624