Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

Thin Solid Films

Volumn 518, Issue 10, 2010, Pages 2808-2811

  Jang, Kyungsoo ^a   Park, Hyeongsik ^a   Jung, Sungwook ^a   Van Duy, Nguyen ^a   Kim, Youngkuk ^a   Cho, Jaehyun ^a   Choi, Hyungwook ^a   Kwon, Taeyoung ^a   Lee, Wonbaek ^a   Gong, Daeyeong ^a   Park, Seungman ^a   Yi, Junsin ^a   Kim, Doyoung ^b   Kim, Hyungjun ^b  

^a Sungkyunkwan University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Al doped zinc oxide; Hall effect measurements; Radio frequency magnetron sputtering; Thin film transistors; UV VIS spectroscopy

Indexed keywords

ACTIVE LAYER; AL-DOPED ZINC OXIDE; AL-DOPED ZNO; CERAMIC TARGET; DOPED ZNO; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE LAYERS; GLASS SUBSTRATES; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; HALL RESISTIVITY; ON/OFF CURRENT RATIO; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BAND GAP ENERGY; ORIENTED DIRECTION; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SI SUBSTRATES; ULTRA-THIN; ULTRATHIN GATE DIELECTRICS; UV/ VIS SPECTROSCOPY; VISIBLE SYSTEMS; WORKING PRESSURES; ZNO;

ALUMINUM; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); GYRATORS; HALL MOBILITY; MAGNETRONS; OPTICAL PROPERTIES; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 76049113550     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.036     Document Type: Article

References (31)

1. Fortunato E.M.C., Barquinha P.M.C., Pimentel A.C.M.B.G., Goncalves A.M.F., Marques A.J.S., Martins R.F.P., and Pereira L.M.N. Appl. Phys. Lett. 85 (2004) 2541
2. Chung J.H., Lee J.Y., Kim H.S., Jang N.W., and Kim J.H. Thin Sold Films 516 (2008) 5597
3. Schropp R.E.I., Stannowski B., and Rath J.K. J. Non-Cryst. Solids 299 (2002) 1304
4. Zhu J., Chen H., Saraf G., Duan Z., Lu Y., and Hsu S.T. J. Electron. Mater. 37 (2008) 1237
5. Masuda S., Kitamura K., Okumura Y., Miyatake S., Tabata H., and Kawai T. J. Appl. Phys. 93 (2003) 1624
6. Hoffman R.L., Norris B.J., and Wager J.F. Appl. Phys. Lett. 82 (2003) 733
7. Bae H.S., and Im S.I. Thin Solid Films 469 (2004) 75
8. Fortunato E., Pimentel A., Pereira L., Goncalves A., Lavareda G., Aguas H., Ferreira I., Carvalho C.N., and Martins R. J. Non-Cryst. Solids 338 (2004) 806
9. Fortunato E.M.C., Barquinha P.M.C., Pimental A.C.M.B.G., Goncalves A.M.F., Marques A.J.S., Pereira L.M.N., and Marins R.F.P. Adv. Mater. 17 (2005) 590
10. Gorrn P., Ghaffari F., Riedl T., and Kowalsky W. Solid State Electron. 53 (2009) 329
11. Verma V.P., Kim D.H., Jeon H., Jeon M., and Choi W. Thin Solid Films 516 (2008) 8736
12. Paine D.C., Yaglioglu B., Beiley Z., and Lee S. Thin Solid Films 516 (2008) 5894
13. Yabuta H., Sano M., Abe K., Aiba T., Nomura K., Kamiya T., and Hosono H. Appl. Phys. Lett. 89 (2006) 112123
14. Barquinha P., Pimentel A., Marques A., Pereira L., Martins R., and Fortunato E.J. J. Non-Cryst. Solids 352 (2006) 1756
15. Yaglioglu B., Yeom H.Y., Beresford R., and Paine D.C. Appl. Phys. Lett. 89 (2006) 062103
16. Prins M.W.J., Zinnemers S.E., Cillessen J.F.M., and Giesbers J.B. Appl. Phys. Lett. 70 (1997) 458
17. Hosono H. Thin Solid Films 515 (2007) 6000-6014
18. Okamura T., Seki Y., Nakagari S., and Okushi H. Jpn. J. Appl. Phys. 31 (1992) 3218
19. Nagase T., Ooie T., and Sakakibara J. Thin Solid Films 357 (1999) 151
20. Fortunato E., Pimentel A., Pereira L., Goncalves A., Lavareda G., Aguas H., Ferreira I., Carvalho C.N., and Martins R. J. Non-Cryst. Solids 338 (2004) 806
21. Saito K., Watanabe Y., Takahashi K., Matsuzawa T., Sang B., and Konagai M. Sol. Energy Mater. Sol. Cells 49 (1997) 187
22. Saito K., Watanabe Y., Takahashi K., Matsuzawa T., Sang B., and Konagai M. Sol. Energy Mater. Sol. Cells 49 (1997) 187
23. Suzuki A., Matsushita T., Wada N., Sakamoto Y., and Okuda M. Jpn. J. Appl. Phys. 35 (1996) L56
24. Kaidashev E.M., Lorenz M., vonWenckstern H., Rahm A., Semmelhack H.C., Han K.H., Benndorf G., Bundesmann C., Hochmuth H., and Grundmann M. Appl. Phys. Lett. 82 (2003) 3951
25. Carcia P.F., Mclean R.S., Reilly M.H., and Nunes G. Appl. Phys. Lett. 82 (2003) 1117
26. Hu J., and Gordon R.G. Sol. Cells 30 (1991) 437
27. Czternastek H. Opto-Electron. Rev. 12 (2004) 49
28. Kwak D.J., Park K.I., Kim B.S., Lee S.H., Lee S.J., and Lim D.G. J. Kor. Phys. Soc. 45 (2004) 206
29. Hirao T., Furuta M., Hiramatsu T., Matsuda T., Li C., Furuta H., Hokari H., Yoshida M., Ishii H., and Kakegawa M. IEEE Trans. Electron Devices 55 (2008) 3136
30. Li X.Y., Li H.J., Wang Z.J., Xia H., Xiong Z.Y., Wang J.X., and Yang B.C. Opt. Commun. 282 (2009) 247
31. Suchea M., Christoulakis S., Katsarakis N., Kitsopoulos T., and Kiriakidis G. Thin Solid Films 515 (2007) 6562