Electrical characteristics of high-performance ZnO field-efect transistors prepared by ultrasonic spray pyrolysis technique

Chinese Physics Letters

Volumn 28, Issue 1, 2011, Pages

  Yi, Ming Dong ^a,b   Xie, Ling Hai ^a   Liu, Yu Yu ^a   Dai, Yan Feng ^b   Huang, Jin Ying ^b  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

SPRAY PYROLYSIS; ULTRASONIC APPLICATIONS; ZINC OXIDE;

CURRENT RATIOS; DEPOSITION TECHNIQUE; ELECTRICAL CHARACTERISTIC; LOW-COSTS; OPERATING PROCESS; PERFORMANCE; SATURATION MOBILITY; ULTRASONIC SPRAY PYROLYSIS; ULTRASONIC SPRAY PYROLYSIS TECHNIQUE;

II-VI SEMICONDUCTORS;

EID: 78751469493     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/1/017302     Document Type: Article

References (18)

1. Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Science 300 1269
2. Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Gonçalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
3. Schneider J J, Hofmann R C, Engstler J, Sofke O R, Jaegermann W, Issanin A and Klyszcz A 2008 Adv. Mater. 20 3383
4. Kim II-D, Lim M, Kang K T, Kim H G and Choi S Y 2006 Appl. Phys. Lett. 89 022905
5. Cheng H C, Chen C F and Tsay C Y 2007 Appl. Phys. Lett. 90 012113
6. Boesoen G F and Jacobs J E 1968 Proc. IEEE 56 2094
7. Ong B S, Li C, Li Y N, Wu Y L and Loutfy R 2007 J. Am. Chem. Soc. 129 2750
8. Meyers S T, Anderson J T, Hung C M, Thompson J, Wager J F and Keszler D A 2008 J. Am. Chem. Soc. 130 17603
9. Zhao J L, Sun X W, Tan S R, Lo G Q, Kwong D L and Cen Z H 2007 Appl. Phys. Lett. 91 263501
10. Sundaram K B and Khan A 1997 Thin Solid Films 295 87
11. Ghandhi S K, Field R J and Sheal J R 1980 Appl. Phys. Lett. 37 449
12. Natsume Y, Sakata H, Hirayama T and Yanagida H 1992 J. Appl. Phys. 72 4203
13. Aranovich J, Ortiz A and Bube R H 1979 J. Vac. Sci. Technol. 16 994
14. Youngjin LEE, Hagbong KIM and Yongrae ROH 2001 Jpn. J. Appl. Phys. 40 2423
15. Bian J M, Li X M, Gao X D, Yu W D and Chen L D 2004 Appl. Phys. Lett. 84 541
16. Du G T, Liu W F, Bian J M, Hu L Z, Liang H W, Wang X S, Liu A M and Yang T P 2006 Appl. Phys. Lett. 89 052113
17. Wang B, Min J H, Zhao Y, Sang W B and Wang C J 2009 Appl. Phys. Lett. 94 192101
18. Volkman S K, Mattis B A, Molesa S E, Lee J B, A de la Fuente Vombeck, Bakhishev T and Subramanian V 2004 IEEE Int. Electron Device Meeting Tech. Dig. (San Francisco 13-15 December 2004) 769