Atomic-layer-deposition HfO2- based InP n-channel metal-oxide-semiconductor field effect transistor using different thicknesses of Al2O3 as interfacial passivation layer

ECS Transactions

Volumn 33, Issue 3, 2010, Pages 487-493

  Wang, Yanzhen ^a   Zhao, Han ^a   Chen, Yen Ting ^a   Xue, Fei ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

DRIVE CURRENTS; GATE LENGTH; HFO2 GATE DIELECTRICS; INP SUBSTRATES; INTERFACE QUALITY; INTERFACIAL LAYER; INTERFACIAL PASSIVATION LAYERS; SUBTHRESHOLD SWING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 79952641188     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3481638     Document Type: Conference Paper

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