The prospects for 10 nm III-V CMOS

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Volumn , Issue , 2010, Pages 166-167

  Del Alamo, J A ^a   Kim, D H ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; CMOS TECHNOLOGY; GATE LENGTH; III-V COMPOUND SEMICONDUCTOR; SCALING DOWN; SI CMOS;

CMOS INTEGRATED CIRCUITS; ELECTRON TRANSPORT PROPERTIES;

TRANSPORT PROPERTIES;

EID: 77957905760     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488901     Document Type: Conference Paper

References (9)

1. D.-H. Kim and J. A. del Alamo, IEDM 2008, p. 719.
2. D.-H. Kim and J. A. del Alamo, IPRM 2009, p. 132.
3. D. A. Antoniadis, private communication, 2009.
4. D.-H. Kim et al., IEDM 2009, p. 861.
5. M. V. Fischetti and S. E. Laux, IEDM 1989, p. 481.
6. D. Jin et al., IEDM 2009, p. 495.
7. M. Radosavjevic et al., IEDM 2009, p. 391.
8. N. Karche et al., IEDM 2009, p. 491.
9. Y. Q. Wu et al., IEDM 2009, p. 331.