Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Chang, Man ^a   Hasan, Musarrat ^a   Jung, Seungjae ^a   Park, Hokyung ^a   Jo, Minseok ^a   Choi, Hyejung ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; FLASH MEMORY; HIGH PRESSURE EFFECTS; LEAKAGE CURRENTS;

BLOCKING OXIDES; ERASE SATURATION LEVEL; HIGH PRESSURE DEUTERIUM OXIDE ANNEALING (HPDOA); LEAKAGE CURRENT DENSITY;

HEAVY WATER;

EID: 36048960747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2812570     Document Type: Article

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