Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 486-491

  Stefanou, S ^a   Hamel, John S ^b   Baine, P ^c   Bain, M ^c   Armstrong, B M ^c   Gamble, H S ^c   Kraft, M ^a   Kemhadjian, H A ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF WATERLOO   (Canada)

^c QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

Faraday cage; Integrated circuit noise; Microwave devices; S parameters; Silicon on insulator (SOI); Substrate crosstalk

Indexed keywords

ANTENNAS; ASPECT RATIO; CAPACITANCE; COMPUTER SIMULATION; DIGITAL SIGNAL PROCESSING; FARADAY EFFECT; FREQUENCIES; INTEGRATED CIRCUITS; MICROMACHINING; MICROWAVE DEVICES; SCATTERING PARAMETERS; SPURIOUS SIGNAL NOISE;

FARADAY CAGE; INTEGRAED CIRCUIT NOISE; SUBSTRATE CROSSTALK;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1642306308     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822348     Document Type: Article

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