The Importance of Distributed Grounding in Combination with Porous Si Trenches for the Reduction of RF Crosstalk Through p- Si Substrate

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 640-642

  Kim, Han Su ^a   Chong, Kyuchul ^a   Xie, Ya Hong ^a   Jenkins, Keith A ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Crosstalk; Mixed signal ICs; Porous Si; Radio frequency (RF) isolation

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC IMPEDANCE; INTEGRATED CIRCUITS; POROUS SILICON; SILICA; SILICON NITRIDE;

DISTRIBUTED GROUNDING;

CROSSTALK;

EID: 0141918454     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.818071     Document Type: Article

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