Polytype formation in GaAs/GaP axial nanowire heterostructures

Journal of Crystal Growth

Volumn 332, Issue 1, 2011, Pages 21-26

  Boulanger, Jonathan P ^a   Lapierre, Ray R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

A1. Crystal structure; A1. Nanostructures; A1. Planar defects; A3. Molecular beam epitaxy; B1. Nanowire; B2. Semiconducting IIIV materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. NANOSTRUCTURES; A1. PLANAR DEFECTS; A3. MOLECULAR BEAM EPITAXY; B1. NANOWIRE; SEMI CONDUCTING III-V MATERIALS;

CRYSTAL STRUCTURE; CRYSTALS; DROPS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; GOLD; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 81155160902     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.07.021     Document Type: Article

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