Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Applied Physics Letters

Volumn 95, Issue 13, 2009, Pages

  Chang, H Y ^a   Tsybeskov, L ^a   Sharma, S ^b   Kamins, T I ^b   Wu, X ^c   Lockwood, D J ^c  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY; CHEMICAL COMPOSITIONS; DISLOCATION-FREE; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY; SI-GE ALLOYS; SI/GE; TEMPERATURE DEPENDENT; TRANSITION LAYERS; VAPOR-LIQUID-SOLID TECHNIQUES;

ELECTRIC WIRE; GERMANIUM; HETEROJUNCTIONS; LATTICE MISMATCH; NANOWIRES; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

THERMAL EXPANSION;

EID: 70349665210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3240595     Document Type: Article

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