Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions

Nanotechnology

Volumn 21, Issue 16, 2010, Pages

  Fakhr, A ^a   Haddara, Y M ^a   LaPierre, R R ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AU PARTICLES; COMPOSITIONAL ANALYSIS; GROWTH CONDITIONS; SEED PARTICLE; SHELL STRUCTURE; STACKING FAULT DENSITY; WURTZITES; ZINC BLENDE;

CRYSTAL GROWTH; GALLIUM; GAS SOURCE MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NANOWIRES; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS; ZINC; ZINC SULFIDE;

CRYSTAL STRUCTURE;

GALLIUM; GALLIUM PHOSPHIDE; INDIUM; INDIUM PHOSPHIDE; ION; NANOTUBE; PHOSPHINE DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GALLIUM; INDIUM; IONS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOSPHINES; SURFACE PROPERTIES;

EID: 77950505893     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/16/165601     Document Type: Article

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