Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Ren, X ^a   Huang, H ^a   Dubrovskii, V G ^b,c   Sibirev, N V ^b   Nazarenko, M V ^b   Bolshakov, A D ^b   Ye, X ^a   Wang, Q ^a   Huang, Y ^a   Zhang, X ^a   Guo, J ^a   Liu, X ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AU CATALYSTS; CRITICAL RADIUS; GAAS; MATERIAL CONSTANT; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NANODROPS; NANOWIRE GROWTH; PHASE PURITY; TEM ANALYSIS; THEORETICAL INVESTIGATIONS; THEORETICAL MODELS; ZINC-BLENDE; ZINCBLENDE STRUCTURES;

GALLIUM ARSENIDE; GOLD COATINGS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; ORGANIC CHEMICALS; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM; SUPERSATURATION; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 79551719145     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014034     Document Type: Article

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