Reconstruction dependent reactivity of As-decapped In0.53Ga 0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Molle, A ^a   Lamagna, L ^a   Grazianetti, C ^a,c   Brammertz, G ^b   Merckling, C ^b   Caymax, M ^b   Spiga, S ^a   Fanciulli, M ^a,c  

^a LABORATORIO MDM   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; DESORPTION TEMPERATURES; ELECTRICAL QUALITY; INTERFACE COMPOSITION;

ALUMINUM; ATMOSPHERIC PRESSURE; ATOMIC LAYER DEPOSITION; DESORPTION; GALLIUM;

INTERFACES (MATERIALS);

EID: 81155148674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659688     Document Type: Article

References (17)

1. D. Peide and J. Ye, Vac. Sci. Technol. A 26 (4), 697 (2008). 10.1116/1.2905246
2. J. Robertson, Appl. Phys. Lett. 94, 152104 (2009). 10.1063/1.3120554
3. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. 94, 162101 (2009). 10.1063/1.3120546
4. B. Shin, J. Clemens, M. A. Kelly, A. C. Kummel, and P. C. McIntyre, Appl. Phys. Lett. 96, 252907 (2010). 10.1063/1.3452336
5. Y. C. Chang, C. Merckling, J. Penaud, C. Y. Lu, W.-E. Wang, J. Dekoster, M. Meuris, M. Caymax, M. Heyns, J. Kwo, and M. Hong, Appl. Phys. Lett. 97, 112901 (2010). 10.1063/1.3488813
6. Y. Hwang, M. A. Wistey, J. Cagnon, R. Engel-Herbert, and S. Stemmer, Appl. Phys. Lett. 94, 122907 (2009). 10.1063/1.3106618
7. J. Shen, D. Winn, W. Melitz, J. Clemens, and A. C. Kummel, ECS Trans. 16, 463 (2008). 10.1149/1.2981627
8. L. Lamagna, M. Fusi, S. Spiga, M. Fanciulli, G. Brammertz, C. Merckling, M. Meuris, and A. Molle, Microelectr. Eng. 88, 431 (2011). 10.1016/j.mee.2010. 10.035
9. A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 96, 202905 (2010). 10.1063/1.3432749
10. H. D. Trinh, E. Y. Chang, P. W. Wu, Y. Y. Wong, C. T. Chang, Y. F. Hsieh, C. C. Yu, H. Q. Nguyen, Y. C. Lin, K. L. Lin, and M. K. Hudait, Appl. Phys. Lett. 97, 042903 (2010). 10.1063/1.3467813
11. A. Molle, G. Brammertz, L. Lamagna, M. Fanciulli, M. Meuris, and S. Spiga, Appl. Phys. Lett. 95, 023507 (2009). 10.1063/1.3182734
12. H.-C. Lin, W.-E. Wang, G. Brammertz, M. Meuris, and M. Heyns, Microelectr. Eng. 86, 1554 (2009). 10.1016/j.mee.2009.03.112
13. A. O'Mahony, S. Monaghan, G. Provenzano, I. M. Povey, M. G. Nolan,. O'Connor, K. Cherkaoui, S. B. Newcomb, F. Crupi, P. K. Hurley, and M. E. Pemble, Appl. Phys. Lett. 97, 052904 (2010). 10.1063/1.3473773
14. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
15. E. J. Kim, L. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. 96, 012906 (2010). 10.1063/1.3281027
16. M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. Wallace, Appl. Phys. Lett. 93, 202902 (2008). 10.1063/1.3033404
17. J. B. Clemens, S. R. Bishop, D. L. Feldwinn, R. Droopad, and A. C. Kummel, Surf. Sci. 603, 2230 (2009). 10.1016/j.susc.2009.04.036