SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 431-434

Effects of surface passivation during atomic layer deposition of Al 2O3 on In0.53Ga0.47As substrates

(8) Lamagna, L a Fusi, M a Spiga, S a Fanciulli, M a,b Brammertz, G c Merckling, C c Meuris, M c Molle, A a

a LABORATORIO MDM (Italy)

b UNIVERSITY OF MILANO BICOCCA (Italy)

c IMEC (Belgium)

Author keywords

Al2O 3; Atomic layer deposition; III V channels; In0.53Ga0.47As; Interface defects passivation; Spectroscopic ellipsometry

Indexed keywords

AL2O 3; CONTROLLED GROWTH; ELECTRICAL PROPERTY; ELECTRICAL RESPONSE; GROWTH REGIME; III-V CHANNELS; IN-SITU; IN0.53GA0.47AS; INTERFACE DEFECTS PASSIVATION; INTERFACE PASSIVATION; OXIDE/SEMICONDUCTOR INTERFACES; RESIDUAL OXIDES; SULFUR PASSIVATION; SURFACE PASSIVATION;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; DEFECTS; DEPOSITION; ECOLOGY; ELECTRIC PROPERTIES; GALLIUM; GERMANIUM; SPECTROSCOPIC ELLIPSOMETRY; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

PASSIVATION;

EID: 79751525494 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.10.035 Document Type: Conference Paper

Times cited : (17)

References (22)

1
- 46449098816
- P.D. Ye J. Vac. Sci. Technol. A26 4 2008 697
- (2008) J. Vac. Sci. Technol. , vol.26 , Issue.4 , pp. 697
- Ye, P.D.¹

2
- 69249166279
- M. Houssa, E. Chagarov, and A. Kummel MRS Bull. 34 2009 504
- (2009) MRS Bull. , vol.34 , pp. 504
- Houssa, M.¹ Chagarov, E.² Kummel, A.³

3
- 67349228795
- C.L. Hinkle, M. Milojevic, E.M. Vogel, and R.M. Wallace Microelectr. Eng. 86 2009 1544
- (2009) Microelectr. Eng. , vol.86 , pp. 1544
- Hinkle, C.L.¹ Milojevic, M.² Vogel, E.M.³ Wallace, R.M.⁴

4
- 69249119394
- M. Heyns, and W. Tsai MRS Bull. 34 2009 485
- (2009) MRS Bull. , vol.34 , pp. 485
- Heyns, M.¹ Tsai, W.²

5
- 0141569647
- Z. Liu, Y. Sun, F. Machuca, P. Pianetta, W.E. Spicer, and R.F.W. Pease J. Vac. Sci. Technol. B 21 2003 1953
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1953
- Liu, Z.¹ Sun, Y.² MacHuca, F.³ Pianetta, P.⁴ Spicer, W.E.⁵ Pease, R.F.W.⁶

6
- 44849143596
- D. Shahrjerdi, D.I. Garcia-Gutierrez, E. Tutuc, and S.K. Banerjee Appl. Phys. Lett. 92 2008 223501
- (2008) Appl. Phys. Lett. , vol.92 , pp. 223501
- Shahrjerdi, D.¹ Garcia-Gutierrez, D.I.² Tutuc, E.³ Banerjee, S.K.⁴

7
- 61349197531
- S. Sioncke, A. Delabie, G. Brammertz, T. Conard, A. Franquet, M. Caymax, A. Urbanzcyk, M. Heyns, M. Meuris, J.L. Van Hemmen, W. Keuning, and W.M.M. Kessels J. Electrochem. Soc. 156 2009 H255
- (2009) J. Electrochem. Soc. , vol.156 , pp. 255
- Sioncke, S.¹ Delabie, A.² Brammertz, G.³ Conard, T.⁴ Franquet, A.⁵ Caymax, M.⁶ Urbanzcyk, A.⁷ Heyns, M.⁸ Meuris, M.⁹ Van Hemmen, J.L.¹⁰ Keuning, W.¹¹ Kessels, W.M.M.¹²

8
- 34547850672
- D. Shahrjerdi, E. Tutuc, and S.K. Banerjee Appl. Phys. Lett. 91 2007 063501
- (2007) Appl. Phys. Lett. , vol.91 , pp. 063501
- Shahrjerdi, D.¹ Tutuc, E.² Banerjee, S.K.³

9
- 34547895938
- Y. Xuan, H.C. Lin, and P.D. Ye IEEE Trans. El. Dev. 54 n 8 2007 1811
- (2007) IEEE Trans. El. Dev. , vol.54 , Issue.8 , pp. 1811
- Xuan, Y.¹ Lin, H.C.² Ye, P.D.³

10
- 67349183396
- H.C. Lin, W.E. Wang, G. Brammertz, M. Meuris, and M. Heyns Microelectr. Eng. 86 2009 1554
- (2009) Microelectr. Eng. , vol.86 , pp. 1554
- Lin, H.C.¹ Wang, W.E.² Brammertz, G.³ Meuris, M.⁴ Heyns, M.⁵

11
- 29144509765
- M.L. Huang, Y.C. Chang, C.H. Chang, Y.J. Lee, P. Chang, J. Kwo, T.B. Wu, and M. Hong Appl. Phys. Lett. 87 2005 252104
- (2005) Appl. Phys. Lett. , vol.87 , pp. 252104
- Huang, M.L.¹ Chang, Y.C.² Chang, C.H.³ Lee, Y.J.⁴ Chang, P.⁵ Kwo, J.⁶ Wu, T.B.⁷ Hong, M.⁸

12
- 39749157907
- C.L. Hinkle, A.M. Sonnet, E.M. Vogel, S. McDonnell, G.J. Hughes, M. Milojevic, B. Lee, F.S. Aguirre-Tostado, K.J. Choi, H.C. Kim, J. Kim, and R.M. Wallace Appl. Phys. Lett. 92 2008 071901
- (2008) Appl. Phys. Lett. , vol.92 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

13
- 66749167599
- H.D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, and E. Garfunkel Appl. Phys. Lett. 94 2009 222108
- (2009) Appl. Phys. Lett. , vol.94 , pp. 222108
- Lee, H.D.¹ Feng, T.² Yu, L.³ Mastrogiovanni, D.⁴ Wan, A.⁵ Gustafsson, T.⁶ Garfunkel, E.⁷

14
- 65549145182
- L. Lamagna, G. Scarel, G. Pavia, and M. Fanciulli J. Vac. Sci. Technol. A 27 3 2009 443
- (2009) J. Vac. Sci. Technol. A , vol.27 , Issue.3 , pp. 443
- Lamagna, L.¹ Scarel, G.² Pavia, G.³ Fanciulli, M.⁴

15
- 73649102774
- A. Molle, L. Lamagna, S. Spiga, M. Fanciulli, G. Brammertz, and M. Meuris Thin Solid Films 518 2010 S123
- (2010) Thin Solid Films , vol.518 , pp. 123
- Molle, A.¹ Lamagna, L.² Spiga, S.³ Fanciulli, M.⁴ Brammertz, G.⁵ Meuris, M.⁶

16
- 67650742297
- A. Molle, G. Brammertz, L. Lamagna, M. Fanciulli, M. Meuris, and S. Spiga Appl. Phys. Lett. 95 2009 023507
- (2009) Appl. Phys. Lett. , vol.95 , pp. 023507
- Molle, A.¹ Brammertz, G.² Lamagna, L.³ Fanciulli, M.⁴ Meuris, M.⁵ Spiga, S.⁶

17
- 63649098537
- E. Langereis, S.B.S. Heil, H.C.M. Knoops, W. Keuning, M.C.M. van de Sanden, and W.M.M. Kessels J. Phys. D: Appl. Phys. 42 2009 073001
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 073001
- Langereis, E.¹ Heil, S.B.S.² Knoops, H.C.M.³ Keuning, W.⁴ Van De Sanden, M.C.M.⁵ Kessels, W.M.M.⁶

18
- 69049116282
- R. Engel-Herbert, Y. Hwang, J. Cagnon, and S. Stemmer Appl. Phys. Lett. 95 2009 062908
- (2009) Appl. Phys. Lett. , vol.95 , pp. 062908
- Engel-Herbert, R.¹ Hwang, Y.² Cagnon, J.³ Stemmer, S.⁴

19
- 49749116852
- S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle, E.M. Vogel, J. Kim, T. Yang, Y. Xuan, P.D. Ye, and R.M. Wallace Appl. Phys. Lett. 93 2008 061907
- (2008) Appl. Phys. Lett. , vol.93 , pp. 061907
- Aguirre-Tostado, S.¹ Milojevic, M.² Choi, K.J.³ Kim, H.C.⁴ Hinkle, C.L.⁵ Vogel, E.M.⁶ Kim, J.⁷ Yang, T.⁸ Xuan, Y.⁹ Ye, P.D.¹⁰ Wallace, R.M.¹¹

20
- 56849122383
- M. Milojevic, F.S. Aguirre-Tostado, C.L. Hinkle, H.C. Kim, E.M. Vogel, J. Kim, and R.M. Wallace Appl. Phys. Lett. 93 2008 202902
- (2008) Appl. Phys. Lett. , vol.93 , pp. 202902
- Milojevic, M.¹ Aguirre-Tostado, F.S.² Hinkle, C.L.³ Kim, H.C.⁴ Vogel, E.M.⁵ Kim, J.⁶ Wallace, R.M.⁷

21
- 21744444606
- R.L. Puruunen J. Appl. Phys. 97 2005 121301
- (2005) J. Appl. Phys. , vol.97 , pp. 121301
- Puruunen, R.L.¹

22
- 20444484490
- A. Delabie, R.L. Puurunen, B. Brijs, M. Caymax, T. Conard, B. Onsia, O. Richard, W. Vandervorst, C. Zhao, M.M. Heyns, M. Meuris, M. Viitanan, H. Brongersma, M. de Ridder, L. Goncharova, E. Garfunkel, T. Gustafsson, and W. Tsai J. Appl. Phys. 97 2005 064104
- (2005) J. Appl. Phys. , vol.97 , pp. 064104
- Delabie, A.¹ Puurunen, R.L.² Brijs, B.³ Caymax, M.⁴ Conard, T.⁵ Onsia, B.⁶ Richard, O.⁷ Vandervorst, W.⁸ Zhao, C.⁹ Heyns, M.M.¹⁰ Meuris, M.¹¹ Viitanan, M.¹² Brongersma, H.¹³ De Ridder, M.¹⁴ Goncharova, L.¹⁵ Garfunkel, E.¹⁶ Gustafsson, T.¹⁷ Tsai, W.¹⁸

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