Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

Current Applied Physics

Volumn 11, Issue 5 SUPPL., 2011, Pages

  Kim, Dongwoo ^a   Kim, Doohyun ^a   Kim, Hyoungjin ^a   So, Hyunwook ^a   Hong, Munpyo ^a  

^a Korea University   (South Korea)

Author keywords

Ammonia; Contact resistance; OTFT; Plasma treatment; Silicon nitride; Soluble OSC

Indexed keywords

AMMONIA PLASMA TREATMENT; BASIC MECHANISM; CHANNEL REGION; ELECTRODE SURFACES; FIELD-EFFECT MOBILITIES; INTERFACE CHARGE; ORGANIC THIN FILM TRANSISTORS; OTFT; P-TYPE; PLASMA TREATMENT; REPULSIVE FORCES; SOLUBLE DERIVATIVES; SOLUBLE ORGANIC SEMICONDUCTORS; SOLUBLE OSC; SOURCE-DRAIN; SURFACE ENERGIES;

AMMONIA; CONTACT RESISTANCE; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GOLD; NITROGEN PLASMA; PHOTOTRANSISTORS; PLASMA APPLICATIONS; PLASMA STABILITY; POLYMER FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; SURFACE CHEMISTRY; THIN FILMS; THIOPHENE;

THIN FILM TRANSISTORS;

EID: 81155134183     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.05.021     Document Type: Conference Paper

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