Silicon for thin-film transistors

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 15-19

  Wagner, Sigurd ^a   Gleskova, Helena ^a   Cheng, I Chun ^a   Wu, Ming ^b  

^a Princeton University   (United States)

^b Aegis Semiconductor Inc   (United States)

Author keywords

Flexible substrates; Thin films; Transistors

Indexed keywords

ELECTRON MOBILITY; HOLE MOBILITY; SILICON; SUBSTRATES;

FIELD-EFFECT MOBILITIES;

THIN FILM TRANSISTORS;

EID: 0038147240     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00121-4     Document Type: Conference Paper

References (29)

1. Wagner S., Wu M., Min B.-G.R., Cheng I.-C. Polycrystalline Semiconductors VI, Solid State Phenomena, vol. 80-81. 2001;325-336 Scitec Publications Ltd, Switzerland.
2. Theiss S.D., Wagner S. IEEE Electron Device Lett. 17:1996;578.
3. Karim K.S., Nathan A., Rowlands J.A. J. Vac. Sci. Tech. Part A. 20:2002;1095.
4. Mohan N., Karim K.S., Nathan A. J. Vac. Sci. Tech. Part A. 20:2002;1043.
5. F.P. Cuomo, R.G. Stewart, R. Huq, B. Greening, M.G. Kane, D. Jose, T. Meyer, A.C. Ipri, Soc. Inf. Display Int. Symp. Dig. XXIX, (1998) 967.
6. Y. Chen, K. Denis, P. Kazlas, P. Drzaic, SID Dig. Tech. Papers, 32 (2001) 157.
7. G.N. Parsons, C.S. Yang, C.B. Arthur, T.M. Klein, L. Smith, in: G.N. Parsons, C.C. Tsai, T.S. Fahlen, C.H. Seager (Eds.), Flat Panel Display Materials, MRS Symp. Proc. 508 (1998) 19.
8. Gleskova H., Wagner S., Suo Z. Mater. Res. Soc. Symp. Proc. 508:1998;73.
9. J.N. Sandoe, Dig. Tech. Papers SID 29 (1998) 293.
10. E. Lueder, M. Muecke, S. Polach, Proc. Int. Display Res. Conf., Asia Display 1998 (1998) 173.
11. A. Constant, S.G. Burns, H. Shanks, C. Gruber, A. Landin, D. Schmidt, C. Thielen, F. Olympie, T. Schumacher, J. Cobbs, ECS Proc. 94-35 (1995) 392.
12. D.B. Thomasson, M. Bonse, J.R. Huang, C.R. Wronski, T.N. Jackson, IEEE IEDM 1998, Tech. Dig. (1998) 253.
13. H. Gleskova, S. Wagner, Proceedings of the Second International Symposium on Polyimides and Other High Temperature Polymers, Newark, NJ, December 3-5, in press.
14. C.E. Forbes, A. Gelbman, C. Turner, H. Gleskova, S. Wagner, SID, Boston, USA, May 21-23, 2002, Soc. Inf. Display, Dig. Tech. Papers (2002), 1201.
15. Nagahara T., Fujimoto K., Kohno N., Kashiwagi Y., Kakinoki H. Jpn. J. Appl. Phys. 31:1992;4555.
16. Woo J., Lim H., Jang J. Appl. Phys. Lett. 65:1994;1644.
17. Meiling H., Brockhoff A.M., Rath J.K., Schropp R.E.I. MRS Symp. Proc. 508:1998;31.
18. Chen Y., Wagner S. Appl. Phys. Lett. 75:1999;1125.
19. Cheng I-C., Wagner S. Appl. Phys. Lett. 80:2002;440.
20. I-C. Cheng, S. Wagner, E-MRS 2002, paper K-III.1, in press.
21. Wu M., Pangal K., Sturm J.C., Wagner S. Appl. Phys. Lett. 75:1999;2244.
22. Howell R.S., Stewart M., Karnik S.V., Saha S.K., Hatalis M.K. IEEE Electron Device Lett. 21:2000;70.
23. Serikawa T., Omata F. IEEE Electron Device Lett. 20:1999;574.
24. Serikawa T., Omata F. IEEE Trans. Electron Devices. 49:2002;820.
25. S.D. Theiss, P.G. Carey, P.M. Smith, P. Wickboldt, T.W. Sigmon, Y.J. Tung, T.-J. King, IEEE IEDM 1998, Tech. Dig. (1998) 257.
26. Ma E.Y., Wagner S. Appl. Phys. Lett. 74:1999;2661.
27. Wu Ming, Bo Xiang-Zheng, Sturm James C., Wagner Sigurd. IEEE Trans. Electron Devices. 49:2002;1993.
28. Ming Wu, Xiang-Zheng Bo, James C. Sturm, Sigurd Wagner, IEEE Trans. Electron Devices, in press.
29. Ming Wu, PhD Thesis, Princeton University, 2001.