Fabrication of MIM capacitors with 1000 Å silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applications

Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 341-348

  So, Soon Jin ^a   Oh, Doo Seok ^b   Sung, Ho Kun ^b   Park, Choon Bae ^a  

^a Wonkwang University   (South Korea)

^b ON SEMICONDUCTOR   (United States)

Author keywords

A3. PECVD; B1. InGaP GaAs; B1. Silicon nitride; B3. HBT; B3. MIM capacitor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CAPACITORS; ELECTRIC FIELD EFFECTS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; THIN FILMS;

INGAP/GAAS; MIM CAPACITORS; PECVD; WORKING PRESSURES;

MIM DEVICES;

EID: 18444363354     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.073     Document Type: Article

References (8)

1. J.G. Tenedorio, and P.A. Terizian IEEE Electron Devices Lett. 5 1984 199
2. E.Y. Chang, G.T. Cibuzar, and K.P. Pande IEEE Electron Device 35 1988 1412
3. J.J. Brown, A.E. Echmitz, M. Hu, J.A. Pusl, J.B. Shealy, D.P. Docter, M.A. Thompson, L.D. Nguyen, GaAs PHEMT device passivation technology for high efficiency power amplifier applications, GaAs MANTECH Technical Digest, 1996, pp. 187-190.
4. X passivation process, Proceeding of the IEEE MTT Symporsium, 1999, pp. 108-111.
5. C.J. Snadroff Appl. Phys. Lett. 51 1987 33
6. A. Kapila J. Vac. Sci. Technol. B-13 1995 10
7. J. Scarpulla, D. Eng, S. Olson, C. S. Wu, A TDDB Model of Si3N4-based capacitors in GaAs MMICs, Proceeding of International Reliability Physics Symposium, 1999, pp. 128-137.
8. L.J. Quinn, S.J.N. Mitchell, B.M. Armstrong, and H.S. Gamble J. Non-Cryst. Solids 187 1995 347