Effect of a SiNx insulator on device properties of pentacene-TFTs with a low-cost copper source/drain electrode

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Li, Jun ^a   Zhang, Xiao Wen ^a,b   Zhang, Liang ^a,b   Zhang, Hao ^a   Jiang, Xue Yin ^a   Zhu, Wen Qing ^a,b   Zhang, Zhi Lin ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CRYSTALLINITIES; CU ELECTRODE; DEPOSITION TEMPERATURES; DEVICE PROPERTIES; ELECTRICAL PROPERTY; INSULATOR SURFACES; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENES; SATURATION MOBILITY; SOURCE/DRAIN ELECTRODES; WATER CONTACT ANGLE;

CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; ELECTRIC PROPERTIES; PLASMA DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE;

THIN FILM TRANSISTORS;

EID: 77951076163     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045027     Document Type: Article

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