Effects of plasma process induced damages on organic gate dielectrics of organic thin-film transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5672-5675

  Kim, Doo Hyun ^a   Kim, Dong Woo ^a   Kim, Keon Soo ^a   Kim, Hyoung Jin ^a   Moon, Ji Sun ^a   Hong, Mun Pyo ^a   Kim, Bo Sung ^b   Shin, Jung Han ^b   Kim, Young Min ^b   Song, Keun Kyu ^b   Shin, Seong Sik ^b  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

OTFT; Plasma damage; Process induced damage

Indexed keywords

DIELECTRIC MATERIALS; EVAPORATION; GATES (TRANSISTOR); MOISTURE; PHENOLS; PLASMA DEPOSITION; PLASMAS; SURFACE CHEMISTRY; SURFACE TENSION; THERMAL EVAPORATION; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; VAPORS;

BOTTOM CONTACTS; CONVENTIONAL PLASMAS; DAMAGE EFFECTS; DEPOSITION METHODS; FABRICATION PROCESSES; METAL DEPOSITION PROCESSES; ORGANIC GATE INSULATORS; ORGANIC LAYERS; ORGANIC THIN FILM TRANSISTORS; OTFT; PLASMA DAMAGE; PLASMA DAMAGES; PLASMA PROCESS INDUCED DAMAGES; PLASMA SPUTTERING; SURFACE ENERGIES;

GATE DIELECTRICS;

EID: 55149092984     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5672     Document Type: Article

References (15)

1. H. Y. Choi, S. H. Kim, and J. Jang: Adv. Mater. (Weinheim, Ger.) 16 (2004) 732.
2. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm: Appl. Phys. Lett. 82 (2003) 4175.
3. S. M. Pyo, H. S. Son, K. Y. Choi, M. H. Yi, and S. K. Hong: Appl. Phys. Lett. 86 (2005) 133508.
4. G. H. Kim, S. M. Yoon, C. A. Kim, and K. S. Suh: Jpn. J. Appl. Phys. 44 (2005) L416.
5. M. Yoshida, S. Uemura, T. Kodzasa, T. Kamata, M. Matsuzawa, and T. Kawai: Synth. Met. 137 (2003) 967.
6. Y. S. Jang, D. H. Kim, and K. W. Cho: Appl. Phys. Lett. 88 (2006) 072101.
7. M. P. Hong, B. S. Kim, Y. U. Lee, K. K. Song, J. H. Oh, J. H. Kim, T. Y. Choi, M. S. Ryu, and K. Chung: SID Int. Symp. Dig. Tech. Pap. 36 (2005) 23.
8. D. M. Mattox: J. Vac. Sci. Technol. A 7 (1989) 1105.
9. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom: Appl. Phys. Lett. 71 (1997) 3853.
10. D. K. Owens and R. C. Wendt: J. Appl. Polym. Sci. 13 (1969) 1741.
11. P. F. Carcia, R. S. McLean, M. H. Reilly, Z. G. Li, J. Pillione, and R. F. Messier: J. Vac. Sci. Technol. A 21 (2003) 745.
12. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Weher: J. Appl. Phys. 92 (2002) 5259.
13. M. Calistre-Yeh, E. J. Kramer, R. Sharma, W. Zhao, M. H. Rafailovich, J. Sokolov, and J. D. Broch: Langmuir 12 (1996) 2747.
14. K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, and B. Batlogg: J. Appl. Phys. 96 (2004) 6431.
15. A. Rolland, J. Richard, J.-P. Kleider, and D. Mencaraglia: J. Elcctrochem. Soc. 140 (1993) 3679.