Composition influence of SiNx gate insulator fabricated by radio frequency (RF) Magnetron sputtering on characteristics of organic thin-film transistors

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5995-5998

  Yuan, Guang Cai ^a   Xu, Zheng ^a   Zhao, Su Ling ^a   Zhang, Fu Jun ^a   Jia, Xiao Yun ^a   Xu, Na ^a   Sun, Qin Jun ^a   Xu, Xu Rong ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

Film composition; Hydrophobicity; Organic thin film transistor

Indexed keywords

CHEMICAL SENSORS; CONTACT ANGLE; FABRICATION; FIELD EFFECT TRANSISTORS; HYDROPHOBICITY; MAGNETRON SPUTTERING; NITRIDES; OZONE; PHOTOTRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE CHEMISTRY; SURFACE TREATMENT; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

EFFECTIVE MOBILITIES; FILM COMPOSITION; HYDROPHOBIC SURFACES; INTERFACE MODIFICATION; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTOR (OTFTS); ORGANIC THIN FILM TRANSISTORS; RADIO FREQUENCY MAGNETRON SPUTTERING;

THIN FILM TRANSISTORS;

EID: 60949109640     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.053     Document Type: Article

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