Mesoscale simulation of line-edge structures based on polymer chains in development and rinse processes

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 9, Issue 4, 2010, Pages

  Morita, Hiroshi ^a   Doi, Masao ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Dissipative particle dynamics simulation; Line edge roughness; OCTA system; Polymer chain dynamics; Resist polymer film surface

Indexed keywords

BLOCK COPOLYMERS; COPOLYMERIZATION; DYNAMICS; POLYMER FILMS; ROUGHNESS MEASUREMENT;

DISSIPATIVE PARTICLE DYNAMICS SIMULATION; LINE EDGE ROUGHNESS; OCTA SYSTEM; POLYMER CHAIN DYNAMICS; RESIST POLYMERS;

POLYMERS;

EID: 80455178721     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3530593     Document Type: Conference Paper

References (25)

1. T. H. Fedynyshyn, R. F. Sinta, D. K. Astolfi, A. Cabral, J. Roberts, and R. Meagley, "Deconstructing the resist to probe innate material roughness," Proc. SPIE 6153, 615315 (2006).
2. Q. Lin, D. L. Goldfarb, M. Angelopoulos, S. R. Sriram, and J. S. Moore, "Line-edge roughness in positive-tone chemically amplified resists: effect of additives and processing conditions," Proc. SPIE 4345, 78-86 (2001). (Pubitemid 32993583)
3. H. Tsubaki, T. Yamanaka, F. Nishiyama, and K. Shitabatake, "Study on thematerial design for LWRimprovement," J. Photopolymer Sci. Tech. 20(3), 333 (2007).
4. C. Hohle, N. Heckmann, M. Sebald, M. Markert, N. Stepanenko, F. Houlihan,A. Romano, R. Sakamuri,D. Rentkiewicz, and R.Dammel, "Surface roughness investigation of 157- and 193-nm polymer platforms using different etch conditions," J. Microlith., Microfab., Microsyst. 4, 043009 (2005).
5. T. Fedynyshyn, R. Sinta, D. Astolfi, R. Goodman, A. Cabral, J. Roberts, and R. Meagley, "Resist deconstruction as a probe for innate material roughness," J. Microlith., Microfab., Microsyst. 5, 043010 (2006).
6. G. Lorusso, P. Leunissen, M. Ercken, C. Delvaux, F. Van Roey, N. Vandenbroeck, H. Yang, A. Azordegan, and T. DiBiase, "Spectral analysis of line width roughness and its application to immersion lithography," J. Microlith., Microfab., Microsyst. 5, 033003 (2006).
7. A. Pawloski, A. Acheta, H. Levinson, T. Michaelson, A. Jamieson, Y. Nishimura, and C. Willson, "Line edge roughness and intrinsic bias for two methacrylate polymer resist systems," J. Microlith., Microfab., Microsyst. 5, 023001 (2006).
8. C. Rydberg, J. Bengtsson, and T. Sandströ m, "Dynamic laser speckle as a detrimental phenomenon in optical projection lithography," J. Microlith., Microfab., Microsyst. 5, 033004 (2006).
9. D. Van Steenwinckel, R. Gronheid, F. Van Roey, P. Willems, and J. Lammers, "Novel method for characterizing resist performance," J. Micro/Nanolith. MEMS MOEMS 7, 023002 (2008).
10. G. Gallatin, N. Kita, T. Ujike, and B. Partlo, "Residual speckle in a lithographic illumination system," J. Micro/Nanolith. MEMS MOEMS 8, 043003 (2009).
11. O. Noordman, A. Tychkov, J. Baselmans, J. Tsacoyeanes, G. Politi, M. Patra, V. Blahnik, and M. Maul, "Speckle in optical lithography and its influence on linewidth roughness," J. Micro/Nanolith. MEMS MOEMS 8, 043002 (2009).
12. V. Constantoudis, G. Patsis, and E. Gogolides, "Photoresist line-edge roughness analysis using scaling concepts," J. Microlithogr. Microfabrication, Microsyst. 3(3), 429-435 (2004).
13. T. Mü lders, W. Henke, K. Elian, C. Nö lscher, and M. Sebald, "New stochastic post-exposure bake simulation method," J. Microlith., Microfab., Microsyst. 4, 043010 (2005).
14. A. Saeki, T. Kozawa, S. Tagawa, H. Cao, H. Deng, and M. Leeson, "Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique," J. Micro/Nanolith. MEMS MOEMS 6, 043004 (2007).
15. A. Philippou, T. Mü lders, and E. Schö ll, "Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator," J. Micro/Nanolith. MEMS MOEMS 6, 043005 (2007).
16. C. Mack, "Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems," J. Micro/Nanolith. MEMS MOEMS 8, 029701 (2009).
17. C. Mack, "Stochastic modeling in lithography: use of dynamical scaling in photoresist development," J. Micro/Nanolith. MEMS MOEMS 8, 033001 (2009).
18. V. Constantoudis, G. Kokkoris, P. Xydi, E. Gogolides, E. Pargon, and M. Martin, "Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results," J. Micro/Nanolith. MEMS MOEMS 8, 043004 (2009).
19. G. M. Schmid, M. D. Stewart, S. D. Burns, and C. Grant Willson, J. Electrochemical Soc. 151, G155-G161 (2004).
20. M. Morita andM.Doi, "Meso-scale simulation of the polymer dynamics in the formation process of line-edge roughness," Proc.SPIE 7273, 727337 (2009).
21. R. D. Groot and P. B.Warren, "Dissipative particle dynamics: Bridging the gap between atomistic and mesoscopic simulation," J. Chem. Phys. 107, 4423 (1997).
22. R. D. Groot and T. J.Madden, "Dynamic simulation of diblock copolymer microphase separation," J. Chem. Phys. 108, 8713 (1998).
23. R. D. Groot, "Mesoscopic simulation of polymer-surfactant aggregation," Langmuir 16, 7493 (2000).
24. A. Maitia and S. McGrother, "Bead-bead interaction parameters in dissipative particle dynamics: Relation to bead-size, solubility parameter, and surface tension," J. Chem. Phys. 120, 1594 (2004).
25. M. Doi, et al., see http://octa.jp (2002).