Resist deconstruction as a probe for innate material roughness

Journal of Microlithography, Microfabrication and Microsystems

Volumn 5, Issue 4, 2006, Pages

  Fedynyshyn, Theodore H ^a   Sinta, Roger F ^a   Astolfi, David K ^a   Goodman, Russell B ^a   Cabral, Alberto ^a   Roberts, Jeanette ^b   Meagley, Robert ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Line edge roughness; Photoacid generator; Photoresist

Indexed keywords

FILM ROUGHNESS; LINE EDGE ROUGHNESS; NANOSCALE DISSOLUTION; PHOTOACID GENERATORS (PAG); RESIST FILMS;

ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; IMAGE RECOGNITION; IMAGE SEGMENTATION; SURFACE ROUGHNESS;

PHOTORESISTS;

EID: 33947180637     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.2408410     Document Type: Article

References (18)

1. S. Palmateer, S. Cann, J. Curtin, S. Doran, L. Eriksen, A. Forte, R. Kunz, T. Lysczczarz, M. Stern, and C. Nelson, "Line-edge roughness in sub-0.18-μm resist patterns," Proc. SPIE 3333, 634-642 (1998).
2. M. I. Sanchez, W. D. Hinsberg, F. A. Houle, J. A. Hoffnagle, H. Ito, and C. Nguyen, "Aerial image contrast using interferometric lithography: Effect on line-edge roughness," Proc. SPIE 3678, 160-171 (1999).
3. S. Masuda, X. Ma, G. Noya, and G. Pawlowski, "Lithography and line-edge roughness of high-activation-energy resists," Proc. SPIE 3999, 252-263 (2000).
4. T. Yoshimura, H. Shiraishi, J. Yamamoto, and S. Okazaki, Jpn. J. Appl. Phys. 23, 6065 (1993).
5. H. Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki, and K. Kuriharand, J. Vac. Sci. Technol. B 16, 3315 (1998).
6. T. H. Fedynyshyn, R. F. Sinta, I. Pottebaum, and A. Cabral, "Resist materials for advanced lithography," Proc. SPIE 5753, 281-291 (2005).
7. S. Yasin, M. N. Khalid, D. G. Hasko, and H. Ahmed, Microelectron. Eng. 73-74, 259 (2004).
8. W. L. Wu and W. E. Wallace, J. Vac. Sci. Technol. B16, 1958 (1998).
9. D. R. McKean, R. D. Allen, P. H. Kasai, U. P. Schaedeli, and S. A. MacDonald, "Acid generation and acid diffusion in photoresist films," Proc. SPIE 1672, 94-103 (1992).
10. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, and K. Kurihara, Appl. Phys. Lett. 71, 2388 (1997).
11. G. W. Reynolds and J. W. Taylor, J. Vac. Sci. Technol. B 17, 334 (1999).
12. Q. Lin, R. Sooriyakumaran, and W.-S. Huang, "Toward controlled resist line-edge roughness: Material origin of line-edge roughness in chemically amplified positive-tone resists," Proc. SPIE 3999, 230-239 (2000).
13. D. He, H. Solak, W. Li, and F. Cerrina, J. Vac. Sci. Technol. B 17, 3379 (1999).
14. J. M. Roberts, R. Meagley, T. H. Fedynyshyn, R. F. Sinta, D. K. Astolfi, R. B. Goodman, and A. Cabrai, "Contributions to innate material roughness in resists," Proc. SPIE 6153, 615334 (2006).
15. T. H. Fedynyshyn, R. F. Sinta, D. K. Astolfi, A. Cabrai, J. M. Roberts, and R. Meagley, "Deconstructing the resist to probe innate material roughness," Proc. SPIE 6153, 615315 (2006).
16. T. H. Fedynyshyn, U.S. Patent 6,936,398 (2005).
17. C. A. Cutler, J. F. Mackevich, J. Li, D. J. O'Connell, G. Cardinale, and R. L. Brainard, "Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists," Proc. SPIE 5037, 406-417 (2003).
18. J. S. Petersen and J. D. Byers, "Examination of isolated and grouped feature bias in positive-acting chemically amplified resist systems," Proc. SPIE 2724, 163-172 (1996).