Novel method for characterizing resist performance

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 7, Issue 2, 2008, Pages

  Van Steenwinckel, David ^a   Gronheid, Roel ^b   Van Roey, Frieda ^b   Willems, Patrick ^b   Lammers, Jeroen H ^c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Chemically amplified photoresist; Figure of merit; Linewidth roughness (LWR); Lithographic uncertainty principle (LUP); Resist performance; Resist sensitivity; Resolution

Indexed keywords

LINEWIDTH; LITHOGRAPHY; OPTICAL RESOLVING POWER; WAVELENGTH;

CHEMICALLY AMPLIFIED PHOTORESIST; LINEWIDTH ROUGHNESS (LWR);

PHOTORESISTS;

EID: 42949175587     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2909204     Document Type: Conference Paper

References (17)