Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 6, Issue 4, 2007, Pages

  Philippou, Alexander ^a   Mülders, Thomas ^a   Schöll, Eckehard ^b  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Line edge roughness; Lithography; Mesoscopic simulator; Photoresists; Polymers

Indexed keywords

CHEMICAL ANALYSIS; COMPUTER SIMULATION; EDGE DETECTION; LITHOGRAPHY; MOLECULAR DYNAMICS; PHOTORESISTS; POLYMER MATRIX;

LINE EDGE ROUGHNESS; MESOSCOPIC SIMULATORS; PHOTOACID GENERATOR (PAG) CONCENTRATION;

RANDOM PROCESSES;

EID: 37549035022     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2817656     Document Type: Article

References (26)

1. G. P. Patsis and E. Gogolides, " Simulation of surface and line-edge roughness formation in resists., " Microelectron. Eng. 57 (8), 563-569 (2001).
2. Y. Ma, J. Shin, and F. Cerrina, " Line edge roughness and photoresist percolation development model., " J. Vac. Sci. Technol. B 21 (1), 112-117 (2003).
3. P. C. Tsiartas, L. W. Flanagin, C. L. Henderson, W. D. Hinsberg, I. C. Sanchez, R. T. Bonnecaze, and C. G. Willson, " The mechanism of phenolic polymer dissolution, a new perspective., " Macromolecules 30 (16), 4656-4664 (1997).
4. S. D. Burns, G. M. Schmid, P. C. Tsiartas, and C. G. Willson, " Advancements to the critical ionization dissolution model., " J. Vac. Sci. Technol. B 20 (2), 537-543 (2002).
5. H. Fukuda, " Analysis of line edge roughness using probability process model for chemically amplified resists., " Jpn. J. Appl. Phys., Part 1 42, 3748 (2003).
6. G. M. Gallatin, " Resist blur and line edge roughness., " Proc. SPIE 5754, 38-52 (2005).
7. T. Schnattinger, E. Bär, and A. Erdmann, " Three-dimensional resist development simulation with discrete models., " J. Vac. Sci. Technol. B 24 (6), 3040-3043 (2006).
8. F. A. Houle, W. D. Hinsberg, and M. I. Sanchez, " Kinetic model for positive tone resist dissolution and roughening., " Macromolecules 35, 8591-8600 (2002).
9. K. Hinsen, " The molecular modeling toolkit, a new approach to molecular simulations., " J. Comput. Chem. 21 (2), 79-85 (2000).
10. W. Humphrey, A. Dalke, and K. Schulten, " VMD-visual molecular dynamics., " J. Mol. Graphics 14 (2), 33-38 (1996).
11. T. Mülders, W. Henke, K. Elian, C. Nölscher, and M. Sebald, " New stochastic post-exposure bake simulation method., " J. Microlithogr., Microfabr., Microsyst. 4 (4), 043010 (2005).
12. K. Binder, Monte Carlo Simulation in Statistical Physics, Springer, Berlin (2002).
13. J. Schnakenberg, Algorithmen in der Quantentheorie und Statistischen Physik, Verlag Zimmermann Neufang, Germany (1995).
14. D. T. Gillespie, " A general method for numerically simulating stochastic time evolution of coupled chemical reactions., " J. Comput. Phys. 22, 403-434 (1976).
15. H. Meiling, R. Groeneveld, H. Meijer, U. Mickan, H. J. Voorma, N. Harned, and J. Zimmerman, " Progress in the realisation of EUV lithography., " Proc. 5th Int. Extreme Ultraviolet Lithography Symposium, Barcelona, Spain (16-18 October 2006).
16. see www.synopsys.com/products/tcad/acqmr/sgmc/solideuv.html.
17. F. Elsholz, M. Meixner, and E. Schöll, " Kinetic Monte Carlo simulation of self-organized pattern formation in thin film deposition., " Nucl. Instrum. Methods Phys. Res. B 202C, 249 (2003).
18. F. Elsholz, E. Schöll, and A. Rosenfeld, " Control of surface roughness in amorphous thin film growth., " Appl. Phys. Lett. 84, 4167 (2004).
19. F. Elsholz, E. Schöll, C. Scharfenorth, G. Seewald, H. J. Eichler, and A. Rosenfeld, " Roughness evolution in thin film growth of Si O2 and Nb2 O5., " J. Appl. Phys. 98, 103516 (2005).
20. M. Block and E. Schöll, " Time delayed feedback control in growth phenomena., " J. Cryst. Growth 303, 30 (2007).
21. M. Block, B. Schmittmann, and E. Schöll, " Controlling surface morphologies by time-delayed feedback., " Phys. Rev. B 75, 233414 (2007).
22. G. P. Patsis and E. Gogolides, " Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator., " J. Vac. Sci. Technol. B 23 (4), 1371-1375 (2005).
23. G. P. Patsis, V. Constantoudis, and E. Gogolides, " Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations., " Microelectron. Eng. 75, 297-308 (2004).
24. M. Ercken, L. H. A. Leunissen, I. Pollentier, G. P. Patsis, V. Constantoudis, and E. Gogolides, " Effects of different processing conditions on line edge roughness for 193 nm and 157 nm resists., " Proc. SPIE 5375, 266-275 (2004).
25. J. M. J. Frechet, F. Bouchard, E. Eichler, F. M. Houlihan, T. Iizawa, B. Kryczka, and C. G. Willson, " Thermally depolymerizable polycarbonates V. Acid catalyzed thermolysis of allylic and benzylic polycarbonates: a new route to resist imaging., " Polym. J. (Tokyo, Jpn.) 19 (2), 31 (1987).
26. C. Eschbaumer, N. Heusinger, M. Kern, A. Jutgla, C. Hohle, and M. Sebald, " Chemically amplified main chain scission, chopping the influence of polymer dimensions on line edge roughness., " J. Photopolym. Sci. Technol. 16, 13-18 (2003).