Correlation between AlGaN/GaN MISHFET performance and HfO2 insulation layer quality

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 312-314

  Shi, Junxia ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

AlGaN; GaN; HEMT; HfO2; power switch

Indexed keywords

ALGAN; GAN; HEMT; HFO2; POWER SWITCH;

ATOMIC LAYER DEPOSITION; DC POWER TRANSMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; X RAY DIFFRACTION;

HAFNIUM COMPOUNDS;

EID: 79951943232     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2098839     Document Type: Article

References (8)

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