High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8145, Issue , 2011, Pages

  Shi, L ^a   Nihtianov, S ^a   Scholze, F ^b   Gottwald, A ^b   Nanver, L K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

deep ultraviolet; extreme ultraviolet; photodiode; spectral responsivity; ultrashallow junction; vacuum ultraviolet

Indexed keywords

DEEP ULTRAVIOLET; EXTREME ULTRAVIOLET; SPECTRAL RESPONSIVITY; ULTRA SHALLOW JUNCTION; VACUUM ULTRAVIOLET;

ASTRONOMY; BORON; BORON COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; GAMMA RAYS; HETEROJUNCTION BIPOLAR TRANSISTORS; INSTRUMENTS; PHOTODIODES; SEMICONDUCTOR JUNCTIONS; VACUUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80055052414     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.891865     Document Type: Conference Paper

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