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Volumn , Issue , 2008, Pages 278-281

Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

Author keywords

[No Author keywords available]

Indexed keywords

BORON; PHOTODIODES; SEMICONDUCTING SILICON COMPOUNDS; ULTRAVIOLET DEVICES;

EID: 58049105584     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681752     Document Type: Conference Paper
Times cited : (37)

References (8)
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    • Emerging Lithographic Technologies XII, March
    • B. M. LaFontaine et al., "The use of EUV lithography to produce demonstration devices," in Proc. SPIE, vol. 6921, Emerging Lithographic Technologies XII, March 2008.
    • (2008) Proc. SPIE , vol.6921
    • LaFontaine, B.M.1
  • 2
    • 84924968456 scopus 로고    scopus 로고
    • International Radiation Detectors IRD, Torrance, CA, USA. Available
    • International Radiation Detectors (IRD), Inc., Torrance, CA, USA. Available: 〈http://www.ird-inc.com〉.
    • Inc
  • 3
    • 33846957657 scopus 로고    scopus 로고
    • CVD delta-doped boron surface layers for ultra-shallow junction formation
    • November
    • F. Sarabbi, L. K. Nanver, and T. L. M. Scholtes, "CVD delta-doped boron surface layers for ultra-shallow junction formation," ECS Transactions, vol. 3, no. 2, pp. 35-44, November 2006.
    • (2006) ECS Transactions , vol.3 , Issue.2 , pp. 35-44
    • Sarabbi, F.1    Nanver, L.K.2    Scholtes, T.L.M.3
  • 5
    • 0010572823 scopus 로고    scopus 로고
    • High-accuracy EUV metrology of PTB using synchrotron radiation
    • Metrology, Inspection, and Process Control for Microlithography XV, pp, August
    • F. Scholze et al., "High-accuracy EUV metrology of PTB using synchrotron radiation," in Proc. SPIE, vol. 4344, Metrology, Inspection, and Process Control for Microlithography XV, pp. 402-413, August 2001.
    • (2001) Proc. SPIE , vol.4344 , pp. 402-413
    • Scholze, F.1
  • 6
    • 0000910694 scopus 로고    scopus 로고
    • Mean energy required to produce an electron-hole pair in silicon for photons of energies between 50 and 1500 eV
    • September
    • F. Scholze, H. Rabus, and G. Ulm, "Mean energy required to produce an electron-hole pair in silicon for photons of energies between 50 and 1500 eV," J. Appl. Phys., vol. 84, no. 5, pp. 2926-2939, September 1998.
    • (1998) J. Appl. Phys , vol.84 , Issue.5 , pp. 2926-2939
    • Scholze, F.1    Rabus, H.2    Ulm, G.3
  • 7
    • 84925010029 scopus 로고    scopus 로고
    • Physics Laboratory, Available
    • Physics Laboratory, National Institute of Standards and Technology (NIST). Available 〈http://physics.nist.gov/PhysRefData〉.
  • 8
    • 84878741057 scopus 로고    scopus 로고
    • Center for X-ray Optics, LBNL, Available
    • Center for X-ray Optics, Lawrence Berkeley National Laboratory (LBNL). Available 〈http://henke.lbl.gov/optical-constants〉.
    • Lawrence Berkeley National Laboratory


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.