High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2009, Pages 1877-1882

  Shi, L ^a   Sarubbi, F ^a   Nihtianov, S N ^a,b   Nanver, L K ^a   Scholtes, T L M ^a   Scholze, F ^c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ASML   (Netherlands)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

Dark current; Extreme ultraviolet (EUV) radiation; Photodiodes; Radiation detectors; Response time; Responsivity; Ultrashallow junctions

Indexed keywords

EXTREME ULTRAVIOLET RADIATIONS; EXTREME-ULTRAVIOLET (EUV) RADIATION; RESPONSE TIME; RESPONSIVITY; ULTRA SHALLOW JUNCTION; ULTRASHALLOW JUNCTIONS;

BORON; CHEMICAL VAPOR DEPOSITION; COST REDUCTION; INDUSTRIAL APPLICATIONS; INDUSTRIAL ELECTRONICS; PHOTODIODES; PROFITABILITY; RADIATION; SEMICONDUCTOR DIODES; ULTRAVIOLET DEVICES; ULTRAVIOLET RADIATION;

RADIATION DETECTORS;

EID: 77951559559     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2009.5414855     Document Type: Conference Paper

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