High effective gummel number of CVD boron layers in ultrashallow p +n diode configurations

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1269-1278

  Sarubbi, Francesco ^a   Nanver, Lis K ^a   Scholtes, Tom L M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Boron (B); Chemical vapor deposition (CVD); Diborane(B2H6); Doping; Emitter; Gummel number; P n p bipolar transistor; P+n diode; Solid phase diffusion; Transient enhanced diffusion (TED); Ultrashallow junctions

Indexed keywords

DIBORANE; DOPING; EMITTER; GUMMEL NUMBER; P+N DIODE; SOLID-PHASE DIFFUSION; ULTRA SHALLOW JUNCTION;

BIPOLAR TRANSISTORS; BORON; DIFFUSION; DIODES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; PHOSPHORUS;

CHEMICAL VAPOR DEPOSITION;

EID: 77952741242     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2045672     Document Type: Article

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