CVD delta-doped boron surface layers for ultra-shallow junction formation

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 35-44

  Sarubbi, F ^a   Nanver, L K ^a   Scholtes, T L M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BORON; CHEMICAL VAPOR DEPOSITION; DIODES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; SILICON;

AMORPHOUS LAYER; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; ULTRA-SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 33846957657     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356262     Document Type: Conference Paper

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