Defect density dependence of luminescence efficiency and life-times in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2125-2128

  Garrett, G A ^a   Sampath, A V ^a   Collins, C J ^a   Readinger, E D ^a   Sarney, W L ^a   Shen, H ^a   Wraback, M ^a   Soukhoveev, V ^b   Usikov, A ^b   Dmitriev, V ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Technologies and Devices International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT BASE LAYERS; DEFECT DENSITY; NANOSCALE COMPOSITIONAL INHOMOGENEITIES; RADIATIVE PROCESSES; 68.55.LN; 78.55.CR; 81.15.HI; 85.60.JB; HYDRIDE VAPOR PHASE EPITAXY; INTERNAL QUANTUM EFFICIENCY; LUMINESCENCE EFFICIENCIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

ELECTRIC EXCITATION; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; QUANTUM EFFICIENCY; RADIATION; EPITAXIAL GROWTH; PHOTOEXCITATION;

SEMICONDUCTING ALUMINUM COMPOUNDS; DEFECT DENSITY;

EID: 33746359356     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565448     Document Type: Conference Paper

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