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Japanese Journal of Applied Physics

Volumn 50, Issue 10 PART 2, 2011, Pages

Fabrication of direct-contact higher-k HfO2 gate stacks by oxygen-controlled cap post-deposition annealing

(4) Morita, Yukinori a Migita, Shinji a Mizubayashi, Wataru a Ota, Hiroyuki a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; CRYSTALLOGRAPHIC PHASE; EQUIVALENT OXIDE THICKNESS; GATE STACKS; INTERFACIAL LAYER; NOVEL TECHNIQUES; OXYGEN CHEMISTRY; POST DEPOSITION ANNEALING; THERMAL-ANNEALING;

ANNEALING; LOGIC GATES; OXYGEN; SILICON COMPOUNDS;

HAFNIUM OXIDES;

EID: 80054910865 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.10PG01 Document Type: Article

Times cited : (17)

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