Achievement of higher-k and high-Φ in phase controlled HfO2 film using post gate-electrode-deposition annealing

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 35-45

  Watanabe, Y ^a   Ota, H ^a   Migita, S ^a   Kamimuta, Y ^a   Iwamoto, K ^a   Takahashi, M ^a   Ogawa, A ^a   Ito, H ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRODES; HAFNIUM OXIDES; INFRARED SPECTROSCOPY; LOGIC GATES; NANOCRYSTALLINE MATERIALS; PERMITTIVITY; PHOTODEGRADATION; REFRACTORY METAL COMPOUNDS;

CRYSTALLINE PHASIS; FAR-INFRARED SPECTROSCOPY; GATE ELECTRODE DEPOSITION; GATE ELECTRODES; MONOCLINIC PHASE; STACKED STRUCTURE; TEM OBSERVATIONS; TETRAGONAL PHASIS;

DIELECTRIC MATERIALS;

EID: 45249119953     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779546     Document Type: Conference Paper

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