Experimental demonstration of higher-k phase HfO2 through non-equilibrium thermal treatment

ECS Transactions

Volumn 28, Issue 2, 2010, Pages 203-212

  Nakajima, Yasuhiro ^a   Kita, Koji ^a   Nishimura, Tomonori ^a   Nagashio, Kosuke ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HAFNIUM OXIDES; SILICON;

ANNEALING TIME; EQUILIBRIUM PHASE; EXPERIMENTAL DEMONSTRATIONS; NON EQUILIBRIUM; PEAK INTENSITY RATIO; SI CAPPING LAYER; STRUCTURAL PHASE TRANSFORMATIONS; TETRAGONAL PHASE;

C (PROGRAMMING LANGUAGE);

EID: 78650571575     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3372576     Document Type: Conference Paper

References (5)

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3. Y. Watanabe, H. Ota, S. Migita, Y. Kamimuta, K. Iwamoto, M. Takahashi, A. Ogawa, H. Ito, T. Nabatame, and A. Toriumi., ECS Transactions, 11 (4) 35(2007).
4. S. Migita, Y. Watanabe, H. Ota, T. Nabatame, and A. Toriumi, ECS Transactions, 19 (2), 563(2009).
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