Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0nm) with HfO 2 using a novel oxygen scavenging process for sub 65nm application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 226-227

  Choi, Changhwan ^a   Kang, Chang Yong ^a   Rhee, Se Jong ^a   Abkar, Mohammad Shahariar ^a   Krishna, Siddarth A ^a   Zhang, Manhong ^a   Kim, Hyungseob ^a   Lee, Tackhwi ^a   Zhu, Feng ^a   Ok, Injo ^a   Koveshnikov, Sergei ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL OXIDE FORMATION; OXYGEN SCAVENGING PROCESS; ULTRA-THIN GATE DIELECTRICS; ULTRA-THIN MOSFET;

ANNEALING; DIELECTRIC DEVICES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SCAVENGING; TANTALUM COMPOUNDS;

MOSFET DEVICES;

EID: 33745149335     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. ITRS 2003 Edition (http://public.itrs.net)
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3. C.S. Kang, et al. Symp. VLSI Tech., p146, 2002.
4. J. Lee, et al. IEDM, p95, 2003.
5. V. Misra, et al., Appl. Phys. Letter vol. 78, p4166, 2001.
6. H. Kim, et al, J. Appl. Phys. vol. 96, p3476, 2004.