Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1520-1522

  Faqir, M ^a,d   Bouya, M ^a,b   Malbert, N ^a   Labat, N ^a   Carisetti, D ^b   Lambert, B ^c   Verzellesi, G ^d   Fantini, F ^d  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b TRT France LATPI   (France)

^c United Monolithic Semiconductors GmbH   (Germany)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CURRENT COLLAPSE; CURRENT TRANSIENTS; ELECTRON TRAPPING; KINK EFFECT; NUMERICAL SIMULATION; PHYSICAL SIMULATION; PULSED MEASUREMENTS; TRAP LEVELS;

ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80054881673     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.020     Document Type: Conference Paper

References (14)

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