Impact Ionization in High Performance AlGaN/GaN HEMTs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 487-491

  Brar, B ^a   Boutros, K ^a   DeWames, R E ^a   Tilak, V ^b   Shealy, R ^b   Eastman, L ^b  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; IMPACT IONIZATION; LEAKAGE CURRENTS; OHMIC CONTACTS;

DRAIN VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242302468     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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5. P.M. Asbeck, E.T. Yu, S.S. Lau, G.J Sullivan, J. Van Hove and J. Redwing, Electronics Letters, 33, 1230 (1997)