Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Xu, S J ^a   Li, G Q ^a,e   Wang, Y J ^a   Zhao, Y ^a   Chen, G H ^a   Zhao, D G ^b   Zhu, J J ^b   Yang, H ^b   Yu, D P ^c   Wang, J N ^d  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c PEKING UNIVERSITY   (China)

^d HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^e CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BROADENING MECHANISMS; ELECTRON PHONON INTERACTIONS; OSCILLATOR MODELS; QUANTUM DISSIPATION;

DAMPING; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SPONTANEOUS EMISSION;

QUANTUM THEORY;

EID: 33644501465     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179113     Document Type: Article

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