Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4691-4695

  Cheong, M G ^a   Liu, C ^a   Choi, H W ^a   Lee, B K ^b   Suh, E K ^b   Lee, H J ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE CLEANING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EMISSION PROPERTIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037666135     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562735     Document Type: Article

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