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Volumn 19, Issue 2, 2004, Pages 147-151
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Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
AXIAL SYMMETRY;
COMPOSITIONAL UNIFORMITY;
METAL ORGANIC VAPOUR PHSE EPITAXY;
OPTICAL UNIFORMITY;
CATHODOLUMINESCENCE;
COMPOSITION;
DEPOSITION;
DISLOCATIONS (CRYSTALS);
HETEROJUNCTIONS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
RAMAN SPECTROSCOPY;
SAPPHIRE;
SEMICONDUCTOR GROWTH;
VAPOR PHASE EPITAXY;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 1242288216
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/19/2/003 Document Type: Article |
Times cited : (15)
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References (10)
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