Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3462-3464

  Kaneta, Akio ^a   Mutoh, Takashi ^a   Kawakami, Yoichi ^a   Fujita, Shigeo ^a   Marutsuki, Giichi ^b   Narukawa, Yukio ^b   Mukai, Takashi ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; NEAR FIELD SCANNING OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; POTENTIAL ENERGY; RADIATION EFFECTS; SEMICONDUCTOR QUANTUM WELLS;

PHOTOGENERATION;

INDIUM COMPOUNDS;

EID: 0242415225     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1620677     Document Type: Article

References (13)

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13. The first-order assumption used in this calculation, where radiative lifetimes as well as nonradiative lifetimes in illumination mode are same as those in illumination collection mode. More detailed analysis taking into account the difference in radiative/nonradiative lifetimes are in progress.