Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer

Applied Physics Letters

Volumn 74, Issue 4, 1999, Pages 558-560

  Narukawa, Yukio ^a   Saijou, Shin ^a   Kawakami, Yoichi ^a   Fujita, Shigeo ^a   Mukai, Takashi ^b   Nakamura, Shuji ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000033319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123144     Document Type: Article

References (11)

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