Electronic structure of the interface of aluminum nitride with Si(100)

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Badylevich, M ^a   Shamuilia, S ^a   Afanas'Ev, V V ^a   Stesmans, A ^a   Fedorenko, Y G ^b   Zhao, C ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Photovoltech NV   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM COMPOUNDS; ANNEALING; ATOMIC LAYER DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; NITRIDES; PHASE INTERFACES; PHOTOELECTRICITY; PHOTOEMISSION; PULSED LASER DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; ZINC SULFIDE;

ALN LAYERS; ALUMINUM NITRIDES; ATOMIC LAYERS; BAND ALIGNMENTS; BANDGAP; ENERGY BANDS; ENERGY THRESHOLDS; INDUCED CRYSTALLIZATIONS; INTERNAL PHOTOEMISSIONS; SI(100); WURTZITE PHASE;

AMORPHOUS SILICON;

EID: 56349147945     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2966482     Document Type: Article

References (24)

1. S. Nakamura, M. Senoh, Sh. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.37.L309 37, L309 (1998).
2. C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, and M. Stutzmann, Appl. Phys. Lett. 0003-6951 10.1063/1.1532545 82, 290 (2003).
3. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 0021-8979 10.1063/1.1661876 44, 292 (1973).
4. Y. Kurokawa, K. Utsumi, H. Takamizawa, T. Kamata, and S. Noguchi, IEEE Trans. Compon., Hybrids, Manuf. Technol. 0148-6411 10.1109/TCHMT.1985.1136500 8, 247 (1985).
5. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 0021-8979 10.1063/1.371971 87, 965 (2000).
6. V. Cimalla, V. Lebedev, U. Kaiser, R. Goldhahn, Ch. Foerster, J. Pezoldt, and O. Ambacher, Phys. Status Solidi C 2, 2199 (2005). 0031-8957
7. V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns, J. Appl. Phys. 0021-8979 10.1063/1.1436299 91, 3079 (2002).
8. M. E. Innocenzi, R. T. Swimm, M. Bass, R. H. French, A. B. Villaverde, and M. R. Kokta, J. Appl. Phys. 0021-8979 10.1063/1.345817 67, 7542 (1990).
9. H. Lv, G. Chen, H. Ye, and G. Yan, J. Appl. Phys. 0021-8979 10.1063/1.2710290 101, 053526 (2007).
10. Y. Kim, J. H. Kim, J. E. Park, B. J. Bae, B. Kim, J. T. Park, K. S. Yu, and Y. Kim, Thin Solid Films 339, 200 (1999).
11. V. K. Adamchuk and V. V. Afanas'ev, Prog. Surf. Sci. 0079-6816 10.1016/0079-6816(92)90015-A 41, 111 (1992).
12. R. J. Powell, J. Appl. Phys. 0021-8979 10.1063/1.1659238 41, 2424 (1970).
13. N. V. Nguyen, A. V. Davydov, D. Chandler-Howowitz, and M. Frank, Appl. Phys. Lett. 0003-6951 10.1063/1.2126136 87, 192903 (2005).
14. E. E. Hoppe, R. S. Sorbello, and C. R. Aita, J. Appl. Phys. 0021-8979 10.1063/1.2750406 101, 123534 (2007).
15. J. M. Khoshman and M. E. Kordesch, Phys. Status Solidi C 2, 2821 (2005). 0031-8957
16. H. Y. Joo, H. J. Kim, S. J. Kim, and S. Y. Kim, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.582035 17, 862 (1999).
17. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Höpler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 0021-8979 10.1063/1.366309 82, 5090 (1997).
18. Q. Guo, M. Nishio, H. Ogawa, and A. Yoshida, Phys. Rev. B 0163-1829 10.1103/PhysRevB.55.R15987 55, R15987 (1997).
19. T. L. Tansley and R. J. Egan, Phys. Rev. B 0163-1829 10.1103/PhysRevB.45. 10942 45, 10942 (1992).
20. P. Lawaetz, Phys. Rev. B 5, 4039 (1972).
21. C. Yeh, Z. W. Lu, S. Froyen, and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.46.10086 46, 10086 (1992).
22. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.11810 48, 11810 (1993).
23. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, J. Appl. Phys. 0021-8979 10.1063/1.360930 79, 188 (1996).
24. V. V. Afanas'ev and A. Stesmans, J. Appl. Phys. 0021-8979 10.1063/1.2799091 102, 081301 (2007).