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Volumn 517, Issue 8, 2009, Pages 2712-2718

Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

(7) Reid, Kimberly G a Dip, Anthony a Sasaki, Sadao b Triyoso, Dina c Samavedam, Sri c Gilmer, David d Gondran, Carolyn F H e

a TOKYO ELECTRON AMERICA INC (United States)

b Freescale Semiconductor Inc ^* (United States)

c FREESCALE SEMICONDUCTOR INC (United States)

d SEMATECH (United States)

e ATDF (United States)

Author keywords

Aluminum nitride; Atomic layer deposition; Capping layer; Effective work function; Gate dielectric; High ; High permittivity; Metal gate; Molecular layer deposition; Molybdenum nitride

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; ATOMIC PHYSICS; DIELECTRIC MATERIALS; FUNCTIONS; FURNACES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LIGHT METALS; MATERIALS PROPERTIES; METALS; MOLYBDENUM; NITRIDES; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; WORK FUNCTION;

ATOMIC LAYER DEPOSITION; CAPPING LAYER; EFFECTIVE WORK FUNCTION; GATE DIELECTRIC; HIGH PERMITTIVITY; METAL GATE; MOLECULAR LAYER DEPOSITION; MOLYBDENUM NITRIDE;

ALUMINUM NITRIDE;

EID: 59349118151 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2008.10.032 Document Type: Article

Times cited : (9)

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