Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering

Surface and Coatings Technology

Volumn 198, Issue 1-3 SPEC. ISS., 2005, Pages 68-73

  Zhang, J X ^a   Cheng, H ^a   Chen, Y Z ^a   Uddin, A ^a   Yuan, Shu ^a   Geng, S J ^b   Zhang, S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Aluminum nitride; Reactive sputtering; Silicon; Stress; X ray diffraction

Indexed keywords

ALUMINUM NITRIDE; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; OPTICAL DEVICES; OPTOELECTRONIC DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); HIGH-POWER HIGH-FREQUENCY ELECTRONIC DEVICES; REACTIVE MAGNETRON SPUTTERING; RESIDUAL STRAIN;

SILICON;

COATING;

EID: 20744457591     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.10.075     Document Type: Article

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