Carbon-doped GeTe: A promising material for Phase-Change Memories

Solid-State Electronics

Volumn 65-66, Issue 1, 2011, Pages 197-204

  Betti Beneventi, G ^a,b   Perniola, L ^a   Sousa, V ^a   Gourvest, E ^c,d   Maitrejean, S ^a   Bastien, J C ^a,e   Bastard, A ^a,c   Hyot, B ^a   Fargeix, A ^a   Jahan, C ^a   Nodin, J F ^a   Persico, A ^a   Fantini, A ^a   Blachier, D ^a   Toffoli, A ^a   Loubriat, S ^a   Roule, A ^a   Lhostis, S ^a   Feldis, H ^a   Reimbold, G ^a   Billon, T ^a   De Salvo, B ^a   Larcher, L ^b   Pavan, P ^b   Bensahel, D ^c   Mazoyer, P ^c   Annunziata, R ^f   Zuliani, P ^f   Boulanger, F ^a   more..

^a CEA LETI   (France)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (France)

^d GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^e UNIVERSITÉ DE RENNES 1   (France)

^f STMICROELECTRONICS   (Italy)

Author keywords

Carbon; Chalcogenides; Data retention; Doping; GeTe; GeTeC; PCRAM; Phase change materials; Phase Change Memory (PCM); PRAM; Reliability; RESET current

Indexed keywords

DATA RETENTION; GETE; GETEC; PCRAM; PHASE CHANGES; PRAM; RESET CURRENTS;

CHALCOGENIDES; ELECTRIC CONDUCTIVITY; PHASE STABILITY; RAMAN SPECTROSCOPY;

PHASE CHANGE MEMORY;

EID: 80054011250     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.06.029     Document Type: Conference Paper

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