Cell design considerations for phase change memory as a universal memory

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 132-133

  Lam, Chung ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49049114935     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530832     Document Type: Conference Paper

References (13)

1. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
2. Y. C. Chen et al., LEDM Tech. Dig. 30.3 (2006).
3. K. Sokolowski-Tinten et al., Phys. Rev. Lett. 81, 3679 (1998).
4. J. P. Callan et al., Phys. Rev. Lett. 86, 3650 (2001).
5. S. Lai, IEDM Tech. Dig. 10.1 (2003).
6. S. S. Iyer et al., IBM JRD 49, 333 (2005).
7. W. Wilcke, private communication.
8. F. Pellizzer et al., VLSI Tech. 15.3 (2006).
9. J. H. Oh et al., IEDM Tech. Dig. 2.6 (2006).
10. C. H. Lee et al., LEDM Tech. Dig. 26.5 (2003).
11. Y. Fukuzumi et al., LEDM Tech. Dig. 17.2 (2007).
12. N. Shibata et al., VLSI Circuits 18.5 (2007).
13. T. Nirschl et al., IEDM Tech. Dig. 17.5 (2007).